型号:IPP120N06S4-H1 | 类别:FET - 单 | 制造商:Infineon Technologies |
封装:TO-220-3 | 描述:MOSFET N-CH 60V 120A TO220-3 |
详细参数
类别 | FET - 单 |
---|---|
描述 | MOSFET N-CH 60V 120A TO220-3 |
系列 | OptiMOS™ |
制造商 | Infineon Technologies |
FET型 | MOSFET N 通道,金属氧化物 |
FET特点 | 标准 |
漏极至源极电压(Vdss) | 60V |
电流_连续漏极(Id)0a025000C | 120A |
开态Rds111最大2220a0IdwwwwVgs0a025000C | 2.4 毫欧 @ 100A,10V |
Id时的Vgs(th)111最大222 | 4V @ 200µA |
闸电荷(Qg)0a0Vgs | 270nC @ 10V |
输入电容(Ciss)0a0Vds | 21900pF @ 25V |
功率_最大 | 250W |
安装类型 | 通孔 |
封装/外壳 | TO-220-3 |
供应商设备封装 | PG-TO220-3 |
包装 | 管件 |
供应商
现代芯城(深圳)科技有限公司 | 董0755-82542579 |
深圳市华斯顿电子科技有限公司 | 朱咸华0755-83777708/83777607/82799993 |
深圳市海虹微电子有限公司 | 赵小姐086-0755-83291010 83678410 |
昆山隆诚翔电子有限公司 | 曾小姐0512-82613006 |
北京首天伟业科技有限公司 | 刘经理086-010-62962871、62104931、 62106431、62104891、62104791 |
北京显周科技有限公司 | 刘先生13910052844(微信同步) |
北京显周科技有限公司 | 刘先生13910052844(微信同步) |
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